Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions
Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions
复制标题
具有镁金属化源极/漏极区域的顶栅非晶氧化铟镓锌薄膜晶体管
DOI：
10.1109/ted.2020.2975211
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发表时间：
2020-04-01
影响因子：
3.1
通讯作者：
Zhang, Shengdong
中科院分区：
文献类型：
--
作者：
Peng, Hao;Chang, Baozhu;Zhang, Shengdong
Magnesium (Mg)-induced metallization of amorphous indium-gallium-zinc-oxide (a-IGZO) films is investigated to develop a self-aligned (SA) top-gate (SATG) a-IGZO thin-film transistor (TFT) technology. The high-conductive and SA a-IGZO source/drain (S/D) regions are well realized by a short time of sputtered deposition of Mg onto the a-IGZO film on a heated substrate, followed by the removal of the spare Mg on the surface in hot water. It is shown that the resistivity of the a-IGZO films is lowered to about <inline-formula> <tex-math notation="LaTeX">$4 \times 10^{-{3}}\,\,\Omega $ </tex-math></inline-formula>cm from over <inline-formula> <tex-math notation="LaTeX">$10^{{4}}~\Omega $ </tex-math></inline-formula>cm with a 36-s Mg deposition at <inline-formula> <tex-math notation="LaTeX">$300~^{\circ }\text{C}$ </tex-math></inline-formula>. The metallization effect is believed to be the consequence of a large number of donor-like defects (oxygen vacancies) generated by oxidation–reduction reaction at the interface between the Mg and a-IGZO films. The SATG a-IGZO TFTs fabricated by the proposed technology show excellent electrical characteristics, such as a field-effect mobility of 19.5 cm<inline-formula> <tex-math notation="LaTeX">$^{{2}}\text{V}^{-{1}}\text{s}^{-{1}}$ </tex-math></inline-formula>, a subthreshold swing of 0.19 V/dec, an ON-/ OFF-current ratio of over <inline-formula> <tex-math notation="LaTeX">$10^{{9}}$ </tex-math></inline-formula>, a low S/D series resistance of <inline-formula> <tex-math notation="LaTeX">$2.1~\Omega $ </tex-math></inline-formula>cm, a small channel length shrinking of around <inline-formula> <tex-math notation="LaTeX">$0.1~\mu \text{m}$ </tex-math></inline-formula>, and a high stability against electrical stresses.
Magnesium (Mg)-induced metallization of amorphous indium-gallium-zinc-oxide (a-IGZO) films is investigated to develop a self-aligned (SA) top-gate (SATG) a-IGZO thin-film transistor (TFT) technology. The high-conductive and SA a-IGZO source/drain (S/D) regions are well realized by a short time of sputtered deposition of Mg onto the a-IGZO film on a heated substrate, followed by the removal of the spare Mg on the surface in hot water. It is shown that the resistivity of the a-IGZO films is lowered to about <inline-formula> <tex-math notation="LaTeX">$4 \times 10^{-{3}}\,\,\Omega $ </tex-math></inline-formula>cm from over <inline-formula> <tex-math notation="LaTeX">$10^{{4}}~\Omega $ </tex-math></inline-formula>cm with a 36-s Mg deposition at <inline-formula> <tex-math notation="LaTeX">$300~^{\circ }\text{C}$ </tex-math></inline-formula>. The metallization effect is believed to be the consequence of a large number of donor-like defects (oxygen vacancies) generated by oxidation–reduction reaction at the interface between the Mg and a-IGZO films. The SATG a-IGZO TFTs fabricated by the proposed technology show excellent electrical characteristics, such as a field-effect mobility of 19.5 cm<inline-formula> <tex-math notation="LaTeX">$^{{2}}\text{V}^{-{1}}\text{s}^{-{1}}$ </tex-math></inline-formula>, a subthreshold swing of 0.19 V/dec, an ON-/ OFF-current ratio of over <inline-formula> <tex-math notation="LaTeX">$10^{{9}}$ </tex-math></inline-formula>, a low S/D series resistance of <inline-formula> <tex-math notation="LaTeX">$2.1~\Omega $ </tex-math></inline-formula>cm, a small channel length shrinking of around <inline-formula> <tex-math notation="LaTeX">$0.1~\mu \text{m}$ </tex-math></inline-formula>, and a high stability against electrical stresses.