A facile room temperature iodination route to in situ fabrication of patterned copper-iodide/silicon quasi-bulk-heterojunction thin films for photovoltaic application.
A facile room temperature iodination route to in situ fabrication of patterned copper-iodide/silicon quasi-bulk-heterojunction thin films for photovoltaic application.
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DOI：
10.1039/c4dt03762f
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发表时间：
2015-03
影响因子：
4
通讯作者：
Lei Zhang;Y. Lei;Xiaogang Yang;Jia‐Shyong Cheng;Chengxiang Wang;Huimin Jia;Zhi Zheng
中科院分区：
文献类型：
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作者：
Lei Zhang;Y. Lei;Xiaogang Yang;Jia‐Shyong Cheng;Chengxiang Wang;Huimin Jia;Zhi Zheng
出于能源和环境考虑，期望在室温下以时间有效的方式制造基于单晶硅的异质结膜。在这份报告中，气-固相直接元素反应（DER）的路线，以实现这一目标，首先沉积元素铜层的单晶硅表面，然后与碘蒸气的反应进行说明。采用X射线衍射（XRD）、扫描电子显微镜（SEM）、透射电子显微镜（TEM）、拉曼光谱、光电化学测试和瞬态光伏（TPV）技术对样品进行了表征。本工作的新奇在于以下三个方面：（1）室温下原位CuI/Si准体异质结的形成是由渗入的元素铜层完全转变为γ相碘化铜（γ-CuI）薄膜辅助的;（2）对原生单晶硅进行预处理，以确保形成图案化的粗糙表面，这有利于准体硅的构建，异质结薄膜并增强其化学稳定性和机械稳定性;（3）首次采用光电化学和TPV技术相结合的方法对CuI/Si准体异质结太阳电池的光伏性能和机理进行了检测和评价，这表明界面电场的强度以及开路电势可以通过调节涂覆在经图案化的n-型纳米晶上的CuI的量来调节。Si衬底。
Fabrication of a monocrystalline silicon based heterojunction film at room-temperature in a time-efficient manner is desirable for energy and environmental considerations. In this report, a gas-solid phase direct elemental reaction (DER) route to realize this aim by firstly depositing an elemental copper layer on a monocrystalline silicon surface followed by a reaction with iodine vapor is described. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, photoelectrochemical measurements, and the transient photovoltage (TPV) technique. The novelty of the current work lies in the following three aspects: (1) formation of an in situ CuI/Si quasi-bulk-heterojunction at room temperature is assisted by the infiltrated elemental copper layer being completely transformed into a γ phase copper iodide (γ-CuI) thin film; (2) the virgin monocrystalline silicon is pretreated to ensure a pyramidally patterned rough surface which facilitates the construction of quasi-bulk-heterojunction thin films and enhances their chemical stability and mechanical stability; (3) the photovoltaic performance and mechanism of the resulting CuI/Si quasi-bulk-heterojunction based solar cell was detected and evaluated for the first time by a combination of photoelectrochemical and TPV techniques, which demonstrates that the intensity of the interface electric field as well as the open circuit potential can be adjusted by tuning the amount of CuI coated on the pyramidally patterned n-Si substrate.