Transport properties and the metal–insulator transition of PrRu4P12 single crystal
Transport properties and the metal–insulator transition of PrRu4P12 single crystal
复制标题
PrRu4P12单晶的输运特性和金属-绝缘体转变
DOI：
10.1088/0953-8984/15/28/343
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
H. Sato
中科院分区：
文献类型：
--
作者：
S. Saha;H. Sugawara;T. Namiki;Y. Aoki;H. Sato
报道了用助熔剂法首次成功地生长出高质量的方钴矿PrRu 4P 12单晶，并测量了其电阻率和磁阻（MR），该单晶在TMI 63 K以下出现金属-绝缘体（M-I）转变。在零磁场下，电阻率从低于63 K的金属态电阻率开始增加，反映了M-I转变，在30 K附近显示出肩部，并进一步增加，然后缓慢下降，在0.6 K附近显示出微弱的峰值。在磁场中，电阻率在低温下急剧降低，即，出现大的负MR，并且峰值向更高的温度移动，尽管场效应仅略高于7 K。
We report the first successful growth of a high-quality single crystal by the flux method, and the measurement of its electrical resistivity and magnetoresistance (MR), for the filled skutterudite PrRu4P12, which exhibits a metal–insulator (M–I) transition below TMI 63 K. In zero magnetic field, the resistivity increases from that of the metallic state below 63 K, mirroring the M–I transition, shows a shoulder at around 30 K with a further increase beyond it, and then slowly decreases, showing a faint peak at around 0.6 K. In magnetic fields, the resistivity decreases drastically at low temperatures, i.e., a large negative MR appears, and the peak shifts to higher temperatures, although the field effect is only slight above 7 K.
影响因子：
3.7
作者：
Bauer, ED;Frederick, NA;Maple, MB
通讯作者：
Maple, MB
影响因子：
3.7
作者：
Hitoshi Sugawara;T. Matsuda;K. Abe;Y. Aoki;H. Sato;S. Nojiri;Y. Inada;R. Settai;Y. Ōnuki;Y. Ōnuki
通讯作者：
Hitoshi Sugawara;T. Matsuda;K. Abe;Y. Aoki;H. Sato;S. Nojiri;Y. Inada;R. Settai;Y. Ōnuki;Y. Ōnuki