InGaAs/GaAs QD superlattices: MOVPE growth, structural and optical characterization, and application in intermediate-band solar cells
InGaAs/GaAs QD superlattices: MOVPE growth, structural and optical characterization, and application in intermediate-band solar cells
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InGaAs/GaAs QD 超晶格：MOVPE 生长、结构和光学表征以及在中波段太阳能电池中的应用
DOI：
10.1109/pvsc.2005.1488065
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
M. Al‐Jassim
中科院分区：
文献类型：
--
作者：
A. Norman;M. C. Hanna;P. Dippo;D. Levi;Robert C. Reedy;J. S. Ward;M. Al‐Jassim
我们报告了用于中能带太阳能电池 (IBSC) 的 InGaAs/GaAs 量子点 (QD) 超晶格的生长和表征。通过在 {113}B GaAs 衬底上进行金属有机气相外延 (MOVPE) 生长，获得了具有高达 50 个周期的良好光学和结构质量 QD 超晶格。已经制造了包含Si/spl部分掺杂和未掺杂QD超晶格吸收区域的太阳能电池，并将其性能与包含未掺杂GaAs或未掺杂InGaAs/GaAs超晶格吸收区域的对照电池进行了比较。量子点超晶格细胞表现出比对照细胞更长的波长的光响应。将量子点引入太阳能电池的吸收区域导致开路电压降低，在某些情况下还导致电池的短路电流降低。
We report on the growth and characterization of InGaAs/GaAs quantum dot (QD) superlattices for application in intermediate-band solar cells (IBSCs). Good optical and structural quality QD superlattices with up to 50 periods were obtained by metal-organic vapor-phase epitaxy (MOVPE) growth on {113}B GaAs substrates. Solar cells containing Si /spl part/-doped and undoped QD superlattice absorption regions have been fabricated and their performance compared with control cells containing undoped GaAs or undoped InGaAs/GaAs superlattice absorption regions. The QD superlattice cells exhibited photoresponses extended to longer wavelengths than the control cells. The introduction of QDs to the absorbing region of the solar cells resulted in a decrease in the open-circuit voltages and, in some cases, a decrease in the short-circuit currents of the cells.