CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations
CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations
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通过迁移增强外延生长的 CdSe/ZnSe 量子结构：结构和光学研究
DOI：
10.1063/1.119951
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发表时间：
1997
影响因子：
4
通讯作者：
U. Woggon
中科院分区：
文献类型：
--
作者：
K. Leonardi;H. Heinke;K. Ohkawa;D. Hommel;H. Selke;F. Gindele;U. Woggon
迁移增强外延已被应用于诱导从二维生长的转变，形成自组装岛的生长在ZnSe上的CdSe。透射电子显微镜图像从样品与ZnSe caplayer显示从一个平坦的量子阱过渡到一个中断层与显着的厚度波动时，CdSe超过其临界厚度。这些结果通过高分辨率X射线衍射测量证实，因为仅对于前一样品，假设具有突变界面的平坦量子阱，可以模拟004摇摆曲线。与体相CdSe相比，光致发光峰蓝移约0.5 eV。PL激发实验表明，中断层由嵌入在Zn1−xCdxSe中的具有成分梯度的CdSe岛组成。未加盖样品的原子力显微镜图像显示球形岛，高度为20 nm，直径与高度之比为4：1。
Migration enhanced epitaxy has been applied to induce the change from two-dimensional growth to formation of self-assembling islands in the growth of CdSe on ZnSe. Transmission electron microscopy images from samples with a ZnSe caplayer show a transition from a flat quantum well to an interrupted layer with pronounced thickness fluctuations when the CdSe exceeds its critical thickness. These results are confirmed by high resolution x-ray diffraction measurements, as only for the former sample the 004 rocking curve can be simulated assuming a flat quantum well with abrupt interfaces. Compared to bulk CdSe, the photoluminescence peak is blueshifted by about 0.5 eV. PL excitation experiments indicate that the interrupted layer consists of CdSe islands embedded in Zn1−xCdxSe with a composition gradient. Atomic force microscopy images of uncapped samples show spherical islands with a height of 20 nm and a diameter-to-height ratio of 4:1.