A new generation of cryogenic silicon diode temperature sensors
A new generation of cryogenic silicon diode temperature sensors
复制标题
新一代低温硅二极管温度传感器
DOI：
10.1109/asdam.2008.4743327
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
S. Sapon
中科院分区：
文献类型：
--
作者：
Yu. M. Shwarts;M. Shwarts;S. Sapon
在这项工作中，我们展示了先进低温硅二极管温度传感器（DTS）元件基础的研发成果。在这些传感器中，不存在开关效应对传感器特性的影响，这使得在低温区域以所需的高精度解决温度监测效率提高的问题成为可能。所研发的DTS将能够满足现代精密技术、航天火箭技术、低温电子学、低温技术、低温物理和工程对传感器技术特性的更高要求。通过激励电流值控制传感器响应曲线的能力，将能够扩展DTS的应用领域，既适用于在敏感元件中耗散功率最小化的精确测量，也适用于考虑信噪比要求的不同科学技术领域。
In this work, we present the results of development of element base for advanced cryogenic silicon diode temperature sensors (DTSs). In these sensors, influence of the switching effects on sensor characteristics is absent, that allows solving the problem of rise in temperature monitoring efficiency with the required high accuracy in low-temperature region. The developed DTSs will allow ones to meet elevated requirements to technical sensor characteristics from modern precise technologies, space-rocket technique, low-temperature electronics, cryogenic technique, low-temperature physics and engineering. Achieved possibilities to control the sensor's response curve by the excitation current value will allow to extend DTSs application areas both for precise measurements with minimization of dissipatedpower in the sensitive element and for different areas of science and technology with taking into account the requirements to signal-noise ratio.