Study of concentration‐dependent dielectric properties of n‐type GaAs using variable angle spectroscopic ellipsometry
Study of concentration‐dependent dielectric properties of n‐type GaAs using variable angle spectroscopic ellipsometry
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DOI：
10.1002/sia.740180208
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发表时间：
1992-02
影响因子：
1.7
通讯作者：
P. G. Snyder;Y. Xiong
中科院分区：
文献类型：
--
作者：
P. G. Snyder;Y. Xiong
利用变角椭圆偏振法（VASE）测定了室温（296 K）下si掺杂n型GaAs晶体在1.53 ~ 5.01 eV范围内的介电函数∈光谱。测定了载体浓度为4.6×10 17 ~ 3.3×10 18 cm -3的样品。采用合适的多层模型，从数学上去除表面微观粗糙度、天然氧化层和亚表面损伤的影响
The dielectric function ∈ spectra of Si-doped n-type GaAs crystals at room temperature (296 K) have been determined between 1.53 and 5.01 eV, using variable angle spectroscopic ellipsometry (VASE). Samples with carrier concenhations ranging from 4.6×10 17 to 3.3×10 18 cm -3 were measured. The erects of surface microscopic roughness, native oxide overlayer and the subsurface damage were mathematically removed with an appropriate multilayer model