Surface micromachined accelerometers

Surface micromachined accelerometers
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DOI:
10.1109/4.494198
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发表时间:
1996-03-01
影响因子:
5.4
通讯作者:
Howe, RT
Howe, RT
中科院分区:
工程技术1区
文献类型:
--
作者:
Boser, BE;Howe, RT

文献摘要

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表面微机械加工已使薄膜微机械结构和CMOS或双极/MOS集成电路的共同制造成为可能。本文以线性单轴加速度计为例,讨论了典型电容式位置传感接口电路的基本机械和电子噪声基底。真空操作使多晶硅加速度计的布朗噪声降低到1 μ g/root Hz以下。为了提高传感器性能,应使用静电力反馈控制微结构的位置。模拟和数字闭环加速度计的描述和对比,后者使用高频电压脉冲施加力量子的微结构,并实现非常线性的响应。
Surface micromachining has enabled the cofabrication of thin-film micromechanical structures and CMOS or Bipolar/MOS integrated circuits, Using linear, single-axis accelerometers as a motivating example, this paper discusses the fundamental mechanical as well as the electronic noise floors for representative capacitive position-sensing interface circuits, Operation in vacuum lowers the Brownian noise of a polysilicon accelerometer to below 1 mu g/root Hz. For improved sensor performance, the position of the microstructure should be controlled using electrostatic force-feedback. Both analog and digital closed-loop accelerometers are described and contrasted, with the latter using high-frequency voltage pulses to apply force quanta to the microstructure and achieve a very linear response.