Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates
Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates
复制标题
位错密度对 SiGe 虚拟衬底上 n+∕p 和 p+∕n 结 GaAs 二极管和太阳能电池的影响
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
S. Ringel
中科院分区：
文献类型：
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作者：
C. L. Andre;D. Wilt;A. Pitera;M. Lee;E. Fitzgerald;S. Ringel
最近的实验测量表明，在具有高的穿透位错密度（TDDs）的GaAs中，电子寿命远低于空穴寿命[C. L. Andre，J. J. Boeckl，D. M. Wilt，A. J. Pitera，M. L. Lee，E. A.菲茨杰拉德，B。M. Keyes和S. A. Ringel，Appl. Phys. Lett. 84，3884（2004）]。这种较低的电子寿命表明，在给定的TDD下，与p+ scinn二极管相比，n+ scinp二极管的耗尽区复合增加，从而反向饱和电流（J 0）增加。为了证实这一点，两种极性的GaAs二极管都生长在成分渐变的Ge scinSi 1 −xGex scinSi（SiGe）衬底上，TDD为1× 106 cm −2。它示出，测量的J 0值的比率是一致的预期寿命的反比。在太阳能电池的电流-电压模型中使用TDD依赖的寿命，我们发现，对于给定的短路电流，Voc也表现出较差的TDD容忍GaAs n+ scinp太阳能电池相比，GaAs p+ scinn太阳能电池。在实验中，开放式...
Recent experimental measurements have shown that in GaAs with elevated threading dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, and S. A. Ringel, Appl. Phys. Lett. 84, 3884 (2004)]. This lower electron lifetime suggests an increase in depletion region recombination and thus in the reverse saturation current (J0 for an n+∕p diode compared with a p+∕n diode at a given TDD. To confirm this, GaAs diodes of both polarities were grown on compositionally graded Ge∕Si1−xGex∕Si (SiGe) substrates with a TDD of 1×106cm−2. It is shown that the ratio of measured J0 values is consistent with the inverse ratio of the expected lifetimes. Using a TDD-dependent lifetime in solar cell current–voltage models we found that the Voc, for a given short-circuit current, also exhibits a poorer TDD tolerance for GaAs n+∕p solar cells compared with GaAs p+∕n solar cells. Experimentally, the open-ci...