Ele ctric Properties of Aqueous Grown ZnO Nanorods on Au/Ti/Si Substrates
Ele ctric Properties of Aqueous Grown ZnO Nanorods on Au/Ti/Si Substrates
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Au/Ti/Si 基底上水相生长 ZnO 纳米棒的电性能
DOI：
10.1002/pssc.201000521
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
Mitsuaki Yano
中科院分区：
文献类型：
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作者：
Kenichi Ogata;Hideaki Dobashi,Paul Russel;Kazuto Koike;Shigehiko Sas a,Masataka Inoue;Mitsuaki Yano
研究了水溶液生长ZnO纳米棒的电学性质。通过顶部20 nm厚的Au电极/ZnO纳米棒/底部Au膜结构的垂直电流测量显示出不对称的I-V特性，并根据ZnO纳米棒和Au之间的不同界面特性进行了讨论。基于芯能级X射线光电子能谱（XPS）谱估计顶部Au电极和ZnO纳米棒中的肖特基势垒高度为0.22eV。XPS实验还表明，水溶液生长的ZnO纳米棒具有Zn-极性，这可能是势垒高度较低的原因之一。（© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Electric properties of aqueous grown ZnO nanorods were investigated. Vertical current measurement through the top 20‐nm‐thick Au electrode/ZnO nanorods/bottom Au film structure showed asymmetricI‐Vproperties and was discussed in terms of different interface properties between ZnO nanorods and Au. Schottky barrier height in top Au electrode and ZnO nanorods was estimated to be 0.22eV based on core level X‐ray photoelectron spectroscopy (XPS) spectra. XPS experiment also suggests that aqueous grown ZnO nanorods have Zn‐polarity and that might be one of the reasons of lower barrier height. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)