RF sputtering of polycrystalline (100), (002), and (101) oriented AlN on an epitaxial 3C-SiC (100) on Si(100) substrate
RF sputtering of polycrystalline (100), (002), and (101) oriented AlN on an epitaxial 3C-SiC (100) on Si(100) substrate
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在 Si(100) 衬底上外延 3C-SiC (100) 上射频溅射多晶 (100)、(002) 和 (101) 取向 AlN
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
S. Dimitrijev
中科院分区：
文献类型：
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作者：
A. Iqbal;Kien Chaik;G. Walker;A. Iacopi;F. Mohd;S. Dimitrijev
采用射频溅射法在Si（100）衬底上外延3C-SiC（100）上沉积AlN多晶薄膜。研究了氮气浓度、沉积温度和溅射气压对薄膜性能的影响。这些参数被优化以提高晶体质量和沉积速率。氮浓度从40%到100%变化，并且发现在40%时观察到最大沉积速率。衬底上的RF偏压功率也从100到400 W变化，并且观察到沉积速率成比例地增加。工艺温度从200 °C变化到400 °C，以观察对晶体质量和沉积速率的影响;发现温度变化不会产生显著的变化。本文能够展示使用550 W的RF电源在外延3C-SiC（100）上成功地RF溅射多晶AlN（100）、（101）和（002）。
In this paper, the RF sputtering of polycrystalline AlN thin film on epitaxial 3C-SiC(100) on Si(100) substrate is presented. The effect of nitrogen concentration, deposition temperature and sputtering pressure are studied. These parameters are optimized to improve the crystal quality and deposition rate. Nitrogen concentration was varied from 40% to 100%, and it was found that the maximum deposition rate was observed at 40%. The RF bias power on substrate was also varied from 100 to 400 W, and it was observed that the deposition rate increases proportionally. The process temperature was varied from 200 to 400 °C to see the effect on the crystal quality and deposition rate; it was found that temperature variation does not yield significant shifts. This paper is able to demonstrate a successful RF sputtering of a polycrystalline AlN (100), (101), and (002) on epitaxial 3C-SiC(100) using RF power supply of 550 W.