Catalytic growth rate enhancement of electron beam deposited iron films
Catalytic growth rate enhancement of electron beam deposited iron films
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电子束沉积铁膜的催化生长速率提高
DOI：
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发表时间：
1987
期刊：
影响因子：
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通讯作者：
T. Mayer
中科院分区：
文献类型：
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作者：
R. Kunz;T. Mayer
通过低能（0.5-3.0 keV）电子束诱导五羰基铁的分解沉积了亚微米（<0.25 μm）宽的铁线。五羰基铁的选择性区域热分解也已被证明。结果发现，在一定条件下，热分解只发生在区域上的薄铁膜已预先沉积的电子刺激分解。在125 °C下，在沉积的铁上测得的热分解概率比先前报道的裸硅上的热分解数据大大约900倍。在电子激发分解过程中，测得每个电子15至50个铁原子的异常高的沉积产率。
Submicron (<0.25 μm) wide lines of iron have been deposited by low‐energy (0.5–3.0 keV) electron beam induced decomposition of iron pentacarbonyl. Selective area thermal decomposition of iron pentacarbonyl has also been demonstrated. It was found that under certain conditions, the thermal decomposition only occurred on areas where a thin iron film had been previously deposited by electron stimulated decomposition. At 125 °C, the measured thermal decomposition probability was roughly 900 times greater on the deposited iron than previously reported data show for thermal decomposition on bare silicon. Anomalously high deposition yields of 15 to 50 iron atoms per electron were measured during electron stimulated decomposition.