1.17-μm highly strained GaInAs-GaAs quantum-well laser
1.17-μm highly strained GaInAs-GaAs quantum-well laser
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1.17μm 高应变 GaInAs-GaAs 量子阱激光器
DOI：
10.1109/68.775308
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发表时间：
1999
影响因子：
2.6
通讯作者：
K. Iga
中科院分区：
文献类型：
--
作者：
D. Schlenker;T. Miyamoto;Z. Chen;F. Koyama;K. Iga
报道了高应变1.17-/SPLu/m GaInAs-GaAs双量子阱激光器的优良激光性能和温度特性。我们表明，在器件中采用应变缓冲层对器件性能没有任何折衷。对于具有解理面的1500微米/米长激光器，阈值电流密度达到200A/cm/sup~2。对于解理器件，透明电流密度估计为180A/cm/sup~2/。在150K的波长范围内获得了创纪录的高特征温度。
Excellent lasing properties and temperature characteristic of a highly strained 1.17-/spl mu/m GaInAs-GaAs double-quantum-well laser are reported. We show that a strained buffer layer, which is employed in the device, has no tradeoff on the device performance. For a 1500-/spl mu/m-long laser with cleaved facets a threshold current density of 200 A/cm/sup 2/ is achieved. A transparency current density of 180 A/cm/sup 2/ is estimated for as cleaved devices. A record high characteristic temperature in this wavelength range of 150 K is achieved.