AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX
AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX
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DOI：
10.1109/led.2012.2224313
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发表时间：
2013-01-01
影响因子：
4.9
通讯作者：
Frijlink, P.
中科院分区：
文献类型：
--
作者：
Bouzid-Driad, S.;Maher, H.;Frijlink, P.
这封信报道了AlGaN/GaN高电子迁移率晶体管（HEMT）在高阻硅衬底上的最大振荡截止频率F-MAX的记录。双T形栅极与优化技术相关联，以实现高效的2-D电子气控制，同时减轻寄生电阻。在源栅间距为0.25 μ m、栅长为90 nm的HEMT器件中，获得了F-MAX = 206 GHz、F-T = 100 GHz的良好结果。相关的峰值非本征峰值高达440 mS。mm（-1）。据作者所知，获得的F-MAX和Gm（ext）是硅衬底GaN HEMT技术的最高报道值。通过基于提取的S参数的小信号建模来检查截止频率值的准确性。
This letter reports on AlGaN/GaN high-electron-mobility transistors (HEMTs) on high-resistive silicon substrate with a record maximum oscillation cutoff frequency F-MAX. Double-T-shaped gates are associated with an optimized technology to enable high-efficiency 2-D electron gas control while mitigating the parasitic resistances. Good results of F-MAX = 206 GHz and F-T = 100 GHz are obtained for a 90-nm gate-length HEMT with 0.25-mu m source-to-gate spacing. The associated peak extrinsic transconductance value is as high as 440 mS . mm(-1). To the authors' knowledge, the obtained F-MAX and Gm(ext) are the highest reported values for GaN HEMTs technology on silicon substrate. The accuracy of the cutoff frequency values is checked by small-signal modeling based on extracted S-parameters.