Optical Fano resonance of an individual semiconductor nanostructure
Optical Fano resonance of an individual semiconductor nanostructure
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DOI：
10.1038/nmat3927
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发表时间：
2014-05-01
期刊：
影响因子：
41.2
通讯作者：
Brongersma, Mark L.
中科院分区：
文献类型：
--
作者：
Fan, Pengyu;Yu, Zongfu;Brongersma, Mark L.
在共振光学系统的光散射、透射和反射光谱中可以观察到具有特征非对称线形的法诺共振（1）。它们是由直接和间接的共振辅助通路之间的干扰引起的。在纳米光子学领域，Fano效应已经在各种各样的系统中被观察到，包括金属纳米颗粒组件（2），超材料（2，3）和光子晶体（4，5）。其独特的性能在应用中得到广泛的应用，包括光学滤波，偏振选择器，传感，激光器，调制器和非线性光学（6-11）。我们报告在一个单一的半导体纳米结构中观察到的法诺共振，开辟了他们在有源光子器件中使用的机会。我们还表明，Fano共振半导体纳米结构提供了有趣的机会，同时测量的远场散射响应和近场能量存储通过提取光生电荷。它们一起可以提供这种类型的共振的完整实验表征。
Fano resonances with a characteristic asymmetric line shape can be observed in light scattering, transmission and reflection spectra of resonant optical systems(1). They result from interference between direct and indirect, resonance-assisted pathways. In the nanophotonics field, Fano effects have been observed in a wide variety of systems, including metallic nanoparticle assemblies(2), metamaterials(2,3) and photonic crystals(4,5). Their unique properties find extensive use in applications, including optical filtering, polarization selectors, sensing, lasers, modulators and nonlinear optics(6-11). We report on the observation of a Fano resonance in a single semiconductor nanostructure, opening up opportunities for their use in active photonic devices. We also show that Fano-resonant semiconductor nanostructures afford the intriguing opportunity to simultaneously measure the far-field scattering response and the near-field energy storage by extracting photogenerated charge. Together they can provide a complete experimental characterization of this type of resonance.