Optically pumped ultraviolet lasing from nitride nanopillars at room temperature
Optically pumped ultraviolet lasing from nitride nanopillars at room temperature
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DOI:
10.1063/1.3449576
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发表时间:
2010-06-14
影响因子:
4
通讯作者:
Choi, H. W.
中科院分区:
文献类型:
--
作者:
Chen, Rui;Sun, H. D.;Choi, H. W.
A vertical cavity structure composing of an in situ grown bottom AlxGa1-xN/AlyGa1-yN distributed Bragg reflector and a top SiO2/HfO2 dielectric mirror for ultraviolet (UV) emission has been demonstrated. Close-packed nanopillars with diameters of around 500 nm have been achieved by the route of nanosphere lithography combined with inductively-coupled plasma etching. Optically-pumped UV lasing at a wavelength of 343.7 nm (3.608 eV) was observed at room temperature, with a threshold excitation density of 0.52 MW/cm(2). The mechanism of the lasing action is discussed in detail. Our investigation indicates promising possibilities in nitride-based resonant cavity devices, particularly toward realizing the UV nitride-based vertical-cavity surface-emitting laser. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449576]