Ballistic transport in GaN/AlGaN resonant tunneling diodes
Ballistic transport in GaN/AlGaN resonant tunneling diodes
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DOI：
10.1063/1.3533975
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发表时间：
2011-01
影响因子：
3.2
通讯作者：
S. Sakr;E. Warde;M. Tchernycheva;F. Julien
中科院分区：
文献类型：
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作者：
S. Sakr;E. Warde;M. Tchernycheva;F. Julien
在这项工作中，我们从理论上研究了GaN/AlGaN共振隧穿二极管在弹道制度的垂直输运。基于III族氮化物化合物的异质结构的特征在于大的导带不连续性和内部电场的存在，这两者对电子输运具有重要影响。利用传输矩阵理论，我们研究了势垒高度对谐振电流的影响。我们的计算表明，峰谷比（PVR）的增加，增加铝含量的障碍，这是由于在谷电流大幅下降。此外，我们表明，电流谐振是不同的正，负施加电压。我们还表明，由于导带分布的不对称性，只有一个电流方向导致显着的PVR。最后，我们提出了一种方法，以实现大PVR在两个电流方向，通过减少由内部磁场引起的不对称性。
In this work we theoretically study the vertical transport in GaN/AlGaN resonant tunneling diodes in the ballistic regime. Heterostructures based on III-nitride compounds are characterized by a large conduction band discontinuity and a presence of an internal electric field, both of which have important effects on the electronic transport. Using the transfer matrix formalism, we investigate the effect of the energetic barrier height on the resonant current. Our calculations show an increase in the peak to valley ratio (PVR) with increasing Al content of the barriers which arises from the large decrease in the valley current. Furthermore, we show that the current resonances are different for positive and negative applied voltages. We also demonstrate that, due to the asymmetry of the conduction band profile, only one current direction leads to a significant PVR. Finally, we present an approach to achieve large PVR in both current directions by reducing the asymmetry induced by the internal field.