Fe/MgO interface engineering for high-output-voltage device applications
Fe/MgO interface engineering for high-output-voltage device applications
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DOI：
10.1063/1.2172717
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发表时间：
2006-02
影响因子：
4
通讯作者：
C. Tiușan;M. Sicot;M. Hehn;C. Belouard;S. Andrieu;F. Montaigne;A. Schuhl
中科院分区：
文献类型：
--
作者：
C. Tiușan;M. Sicot;M. Hehn;C. Belouard;S. Andrieu;F. Montaigne;A. Schuhl
本文报道了Fe-ScinMgO-ScinFe外延隧道结的磁输运特性。对于清洁的Fe scinMgO接口，隧道磁阻为150%的测量。然而，磁电阻随外加电压的增加而迅速减小。因此，针对器件应用优化的主要参数，即输出电压，保持相对较低。这种限制已经解决了界面工程通过插入碳杂质在Fe scinMgO界面。虽然隧道磁电阻的幅度略有减少，其变化与施加的电压变得强烈的不对称与大的磁电阻保持高达1.5V。这决定了隧道结输出电压的大幅增加。
The magnetotransport characteristics of Fe∕MgO∕Fe epitaxial tunnel junctions are reported. For clean Fe∕MgO interfaces, a tunnel magnetoresistance of 150% is measured. However, the magnetoresistance decreases rapidly with the applied voltage. Consequently, the main parameter to optimize for device application, namely the output voltage, remains relatively low. This limitation has been solved by interface engineering through the insertion of carbon impurities at the Fe∕MgO interface. Although the tunnel magnetoresistance amplitude is slightly reduced, its variation versus the applied voltage becomes strongly asymmetric with large magnetoresistance maintained up to 1.5V. This determines a large increase of the tunnel junction output voltage.