Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique
Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique
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通过纳米探针技术测量 GaAs 纳米线中少数载流子扩散长度
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
S. Watkins
中科院分区：
文献类型：
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作者：
A. Darbandi;S. Watkins
利用电子束感应电流，通过纳米探针技术，无需光刻处理，研究了 p 型和 n 型 GaAs 纳米线中的少数载流子扩散长度。确定了 Au/GaAs 整流结以及轴向 p-n 结的扩散长度。通过采用薄晶格匹配的 InGaP 钝化壳，少数载流子扩散长度增加了 2 倍，表面复合速度降低了一个数量级。
Minority carrier diffusion lengths in both p-type and n-type GaAs nanowires were studied using electron beam induced current by means of a nanoprobe technique without lithographic processing. The diffusion lengths were determined for Au/GaAs rectifying junctions as well as axial p-n junctions. By incorporating a thin lattice-matched InGaP passivating shell, a 2-fold enhancement in the minority carrier diffusion lengths and one order of magnitude reduction in the surface recombination velocity were achieved.