Switching and jamming transistor effect for vortex matter in honeycomb pinning arrays with ac drives
Switching and jamming transistor effect for vortex matter in honeycomb pinning arrays with ac drives
复制标题
交流驱动器蜂窝钉扎阵列中涡旋物质的开关和干扰晶体管效应
DOI：
10.1103/physrevb.81.024510
复制
发表时间：
2009
影响因子：
3.7
通讯作者：
C. Reichhardt
中科院分区：
文献类型：
--
作者：
C. Reichhardt;C. Reichhardt
我们表明，在存在蜂窝钉扎阵列和交流或交流和直流组合驱动的情况下，II 型超导体中的涡流可能会发生各种显着的动力学现象，包括切换、极化、对称锁定和动态诱导钉扎。这些效应发生在每个钉扎位点有两个涡流的第二匹配场处，并且由于蜂窝阵列的间隙区域中涡流二聚体态的形成而产生。固定和移动涡旋二聚体的方向可以通过应用驱动器从外部控制。我们将其称为极化效应，并证明它可以将涡旋运动锁定或解锁到底层钉扎晶格的不同对称方向。如果移动的涡流被锁定在一个方向，则可以通过施加额外的偏置驱动将运动切换到不同的方向，从而产生横向和纵向速度的急剧跳跃。此外，可以通过在垂直方向上施加力来直接控制一个方向上的直流涡流运动。当移动的二聚体重新定向时，我们发现了显着的动态钉扎效应，其中当二聚体垂直于钉扎晶格的易流动方向时，它们就会堵塞。由于施加外部场可用于关闭涡流，因此我们将其称为干扰晶体管效应。由于在这种情况下缺乏涡流的 n 聚合，这些效应不会发生在三角形钉扎阵列中。这里演示的开关和动态钉扎效应可能有助于创建新型磁通电子设备。
We show that a remarkable variety of dynamical phenomena, including switching, polarization, symmetry locking, and dynamically induced pinning, can occur for vortices in type-II superconductors in the presence of a honeycomb pinning array and an ac or combined ac and dc drive. These effects occur at the second matching field where there are two vortices per pinning site, and arise due to the formation of vortex dimer states in the interstitial regions of the honeycomb array. The orientation of the pinned and moving vortex dimers can be controlled externally by the application of a drive. We term this a polarization effect and demonstrate that it can lock or unlock the vortex motion into different symmetry directions of the underlying pinning lattice. If the moving vortices are locked into one direction, the motion can be switched into a different direction by applying an additional bias drive, producing sharp jumps in the transverse and longitudinal velocities. Further, the dc vortex motion in one direction can be controlled directly by application of a force in the perpendicular direction. When the moving dimers reorient, we find a remarkable dynamical pinning effect in which the dimers jam when they become perpendicular to the easy flow direction of the pinning lattice. Since application of an external field can be used to switch off the vortex flow, we term this a jamming transistor effect. These effects do not occur in triangular pinning arrays due to the lack of the n-merization of the vortices in this case. The switching and dynamical pinning effects demonstrated here may be useful for the creation of new types of fluxtronic devices.