Nonlinear Optical Properties of Semiconductor Nanowires
Nonlinear Optical Properties of Semiconductor Nanowires
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DOI：
10.1109/jstqe.2010.2065796
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发表时间：
2011-07-01
影响因子：
4.9
通讯作者：
Shik, Alexander
中科院分区：
文献类型：
--
作者：
Cisek, Richard;Barzda, Virginijus;Shik, Alexander
描述了半导体纳米线的非线性光学效应，包括二次谐波和三次谐波以及双光子发光的取向依赖性。纳米结构和它们的环境之间的介电常数的不匹配支配光学非线性的上升，导致SHG，即使在具有高对称性晶格的材料中也不会在体状态中产生二次谐波。由于退偏振效应，被照射纳米线内的光电场强度显著地取决于它们与激发光偏振相关的取向。结果，光偏振的旋转导致所有提到的光学现象的巨大的角度依赖性，其中在电场偏振处的最大相对振幅沿沿着NW取向。同时测量的双光子诱导发光，二次谐波和三次谐波的ZnSe纳米线。根据理论，观察到的非线性现象的角度依赖性和环境介电常数的非线性信号的大小的影响进行了论证。角度依赖性的相对幅度也显着影响NW弯曲和不均匀性。
The orientation dependency of nonlinear optical effects, including the second-harmonic generation (SHG) and third-harmonic generation (THG), as well as two-photon luminescence, in semiconductor nanowires (NW) are described. The mismatch of dielectric constants between nanostructures and their environment governs the rise of optical nonlinearities causing SHG even in materials with a high symmetry crystal lattice that would not generate second harmonic in the bulk state. Due to the depolarization effects, the intensity of the optical electric field inside illuminated NWs depends dramatically on their orientation related to the exciting light polarization. As a result, rotation of the light polarization causes giant angular dependency of all the mentioned optical phenomena, with the maximum relative amplitude at the electric-field polarization oriented along the NWs. Simultaneous measurements of two-photon-induced luminescence, SHG and THG in ZnSe NWs are presented. In accordance with the theory, the angular dependencies of nonlinear phenomena were observed and influence of the environmental dielectric constant on the magnitude of the nonlinear signals was demonstrated. The relative amplitudes of the angular dependencies were also significantly influenced by NW bending and nonuniformity.