Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1-xZrxO2
Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1-xZrxO2
复制标题
锗负电容场效应晶体管：Hf1-xZrxO2 中 Zr 成分的影响
DOI：
10.1186/s11671-019-2927-9
复制
发表时间：
2019-04-04
影响因子：
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通讯作者：
Hao, Yue
中科院分区：
文献类型：
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作者：
Peng, Yue;Liu, Yan;Hao, Yue
在Hf1-xZrxO2 （x=0.33、0.48和0.67）中制备了不同Zr成分的锗负电容场效应晶体管（ncfet）。对于每一种Zr成分，NCFET的阈下摆幅（SS）的某些点都表现出突然下降，这是由NC效应引起的。驱动电流I-DS随着退火温度的升高而增加，这应该是由于源极/漏极电阻的降低和载流子迁移率的提高。经多次直流扫频测量，陡SS点可重复且稳定，证明陡SS点是由NC效应引起的。陡SS对应的栅极电压V-GS值一致，通过多次直流扫频保持顺时针I-DS-V-GS。在固定退火温度下，与其他成分相比，Hf0.52Zr0.48O2的NC器件具有更高的I-DS，但滞后较大。Hf0.67Zr0.33O2的NCFET具有良好的无迟滞曲线和高I-DS性能。
Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1-xZrxO2 (x=0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of subthreshold swing (SS), which is induced by the NC effect. Drive current I-DS increases with the increase of annealing temperature, which should be due to the reduced source/drain resistance and improved carrier mobility. The steep SS points are repeatable and stable through multiple DC sweeping measurement proving that they are induced by the NC effect. The values of gate voltage V-GS corresponding to steep SS are consistent and clockwise I-DS-V-GS are maintained through the multiple DC sweeps. At fixed annealing temperature, NC device with Hf0.52Zr0.48O2 achieves the higher I-DS but larger hysteresis compared to the other compositions. NCFET with Hf0.67Zr0.33O2 can obtain the excellent performance with hysteresis-free curves and high I-DS.