Negative Magnetoresistance in the GeSn Strip.
Negative Magnetoresistance in the GeSn Strip.
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DOI：
10.1021/acsami.1c06904
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发表时间：
2021-06
影响因子：
9.5
通讯作者：
Kaixiang Shu;Nan Wang;Nengjie Huo;Fengshuo Wan;Jingbo Li;C. Xue
中科院分区：
文献类型：
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作者：
Kaixiang Shu;Nan Wang;Nengjie Huo;Fengshuo Wan;Jingbo Li;C. Xue
与奇异现象相关的拓扑材料的发现在现代凝聚态物理中引起了越来越多的关注。一个典型的例子是在狄拉克或外尔半金属中提出的手征反常。除了众所周知的拓扑半金属，如TaAs和Na 3Bi，最近，第IV族GeSn合金也被提出在理论上是狄拉克半金属，展示了与当前Si基技术兼容的潜在应用。在这里，我们报告的观察大的负磁阻（MR），是敏感的磁场和电场的方向在GeSn条。这种负MR仅在外加磁场平行于电场时出现，这与拓扑半金属中的手征异常一致。这一工作为探索一类新的Dirac半金属的负磁流变行为及其机理开辟了新的途径。
Discovery of topological materials associated with an exotic phenomenon has attracted increasing attention in modern condensed matter physics. A typical example is the chiral anomaly proposed in the Dirac or Weyl semimetals. In addition to the well-known topological semimetals, such as TaAs and Na3Bi, recently, group IV GeSn alloys were also proposed to be Dirac semimetals in theory, demonstrating potential applications compatible with current Si-based technology. Here, we report the observation of large negative magnetoresistance (MR) that is sensitive to the orientation of the magnetic and electric field in the GeSn strip. This negative MR emerges only when the applied magnetic field is parallel to the electric field, which is consistent with the chiral anomaly in topological semimetals. This work paves a new way toward exploring the negative MR behavior and underlying mechanism in a new class of Dirac semimetals.