High-Performance Poly(3-hexylthiophene) Field-Effect Transistors Fabricated by a Slide-Coating Method
High-Performance Poly(3-hexylthiophene) Field-Effect Transistors Fabricated by a Slide-Coating Method
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滑涂法制造的高性能聚（3-己基噻吩）场效应晶体管
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
K. Yase
中科院分区：
文献类型：
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作者：
Makoto Karakawa;M. Chikamatsu;Y. Yoshida;M. Oishi;R. Azumi;K. Yase
采用滑动镀膜法，将氯仿溶液夹在硅片和载玻片之间，然后对载玻片缓慢拉伸，成功地制备了高取向聚(3-己基噻吩基)薄膜。这种基于P3HT薄膜的有机场效应晶体管的性能表现出高达0.056 cm2 V-1 S-1的场效应晶体管迁移率的高性能。这种简单的溶液工艺是制备P3HT薄膜及其场效应管有序结构的有效方法。
Highly oriented thin-films of poly(3-hexylthiophene) (P3HT) have been successfully fabricated by slide-coating method, in which the chloroform solution is sandwiched between a Si wafer and a slide glass, and followed by slow drawing of the Si wafer with respect to the slide glass. The performance of this organic field-effect transistor (OFET) based on the P3HT film exhibit high-performance of up to 0.056 cm2 V-1 s-1 in FET mobility. This simple solution process is an effective method to fabricate the well-ordered structure of the P3HT film and its OFETs.