High resolution structure imaging and image simulation of stacking fault tetrahedra in ion-implanted silicon
High resolution structure imaging and image simulation of stacking fault tetrahedra in ion-implanted silicon
复制标题
离子注入硅中堆垛层错四面体高分辨率结构成像及图像模拟
DOI：
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发表时间：
1985
期刊：
影响因子：
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通讯作者：
S. Amelinckx
中科院分区：
文献类型：
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作者：
W. Coene;H. Bender;S. Amelinckx
摘要利用高分辨率电子显微镜和计算机模拟技术对离子注入和热退火硅中的层错四面体进行了研究，结果表明，通过观察高分辨率图像中亮点行位移的感觉，可以明确区分空位型和间隙型层错四面体。通过这种方法，观察到的缺陷被识别为空位型层错四面体。评述了从缺陷的尺寸分布估计层错能的方法，并将其应用于目前的观测。
Abstract An investigation of the stacking fault tetrahedra in ion-implanted and thermally annealed silicon, observed by means of high resolution electron microscopy and computer simulation, shows that an unambiguous distinction can be made between vacancy- and interstitial-type stacking fault tetrahedra by examining the sense of shift of the rows of bright dots in the high resolution images. In this way the observed defects are identified as vacancy-type stacking fault tetrahedra. The methods for estimating the stacking fault energy from the size distribution of the defects are commented on and applied to the present observation.