Impact of device geometry and doping concentration variation on electrical characteristics of 22nm FinFET

Impact of device geometry and doping concentration variation on electrical characteristics of 22nm FinFET
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器件几何形状和掺杂浓度变化对 22nm FinFET 电气特性的影响

DOI：
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发表时间：
2013
期刊：
IEEE International Conference ON Emerging Trends in Computing, Communication and Nanotechnology
影响因子：
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通讯作者：
T. R. K. K. Chitroju
T. R. K. K. Chitroju
中科院分区：
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文献类型：
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作者：
K. Sivasankaran;P. S. Mallick;T. R. K. K. Chitroju

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研究了器件物理几何形状和掺杂浓度变化对22 nm FinFET直流特性的影响。用TCAD分析了器件的鳍片厚度(T<sup>Fin</sup></sup>)和栅氧化层厚度(t<sup>x</sup><sup>x</sup>)等器件的几何形状，以及阈值电压(V<sup>th</sup>)、亚阈值摆幅(SS)、导通电流(I<sup>b></sup>)、截止电流(I<sup>F</sup>>)等特性。研究了掺杂浓度对直流特性的影响。结果表明，对于3 nm的T<SUB>翅</SUB>，1.5 nm的T<SUX</SUB>和7 nm的鳍片高度(H<SUB>FIN</SUB>)具有较高的I<SUB>ON</SUB>和较低的I<SUB>OFF</SUB>。
This paper presents the impact of device physical geometry and doping concentration variation on dc characteristics of 22nm FinFET. The device geometry such as thickness of fin (T<sub>fin</sub>) and gate oxide thickness (t<sub>ox</sub>) are varied and the performance such as threshold voltage (V<sub>th</sub>), subthreshold swing (SS), on current (I<sub>on</sub>), off current (I<sub>off</sub>) of FinFET are analyzed using TCAD. Also the impact of doping concentration on dc characteristics were studied. The results show that for T<sub>fin</sub> of 3nm, t<sub>ox</sub> of 1.5nm and fin height (H<sub>fin</sub>) of 7nm has higher I<sub>on</sub> and lower I<sub>off</sub>.