Charge trapping in irradiated SOI wafers measured by second harmonic generation
Charge trapping in irradiated SOI wafers measured by second harmonic generation
复制标题
通过二次谐波产生测量辐照 SOI 晶圆中的电荷俘获
DOI：
10.1109/tns.2004.839140
复制
发表时间：
2004
影响因子：
1.8
通讯作者：
N. Tolk
中科院分区：
文献类型：
--
作者：
Bongim Jun;peixiong zhao;D. Fleetwood;Y. V. White;R. Pasternak;S. Rashkeev;F. Brunier;N. Bresson;M. Fouillat;S. Cristoloveanu;N. Tolk
通过光学二次谐波发生 (SHG) 研究了绝缘体上硅 (SOI) UNIBOND 晶圆的总剂量效应。该技术与用于监测接口电荷的伪 MOSFET 技术进行了定性比较。结合光学和电学方法来分离每个界面的信号对总 SHG 强度的贡献。根据二次谐波信号确定，辐射引起的氧化物和界面陷阱会增加界面场，并将结果与电测量结果进行比较。
Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.