High Critical Current Density 4 MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O3 Substrates without Buffer Layers
High Critical Current Density 4 MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O3 Substrates without Buffer Layers
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DOI：
10.1143/apex.3.063101
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发表时间：
2010-01-01
影响因子：
2.3
通讯作者：
Hosono, Hideo
中科院分区：
文献类型：
--
作者：
Katase, Takayoshi;Hiramatsu, Hidenori;Hosono, Hideo
用脉冲激光沉积法在（La，Sr）（Al，Ta）O3衬底上直接生长Co掺杂BaFe 2As 2（BaFe 2As 2：Co）外延薄膜，在4K下获得了4 MA/cm（2）的高临界电流密度J（c）。高纯靶材的使用和薄膜均匀性的改善是获得高J（c）的关键因素。改进后的BaFe_2As_2：Co外延薄膜几乎不含Fe杂质，结晶度高（晶粒倾斜角Δ ω = 0.5 °，扭转角Δ φ = 0.5 °），超导转变宽度为1.1K。据认为，这些改进导致增强的超导性能可比的单晶。(C)2010日本应用物理学会
High critical current densities J(c) of 4 MA/cm(2) at 4 K were obtained in Co-doped BaFe2As2 (BaFe2As2:Co) epitaxial films grown directly on (La, Sr)(Al, Ta)O-3 substrates by pulsed laser deposition. Use of a highly pure target and improvement of film homogeneity were the critical factors to achieve the high J(c). The improved BaFe2As2:Co epitaxial films contained almost no Fe impurity and showed high crystallinity (crystallite tilt angle Delta omega = 0.5 degrees and twist angle Delta phi = 0.5 degrees) and a sharp superconducting transition with a width of 1.1 K. It is considered that these improvements resulted in the enhanced superconducting properties comparable to those of single crystals. (C) 2010 The Japan Society of Applied Physics