AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
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DOI：
10.1063/1.5010265
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发表时间：
2018-01-22
影响因子：
4
通讯作者：
Kneissl, Michael
中科院分区：
文献类型：
--
作者：
Susilo, Norman;Hagedorn, Sylvia;Kneissl, Michael
研究了在溅射和高温退火的AlN/蓝宝石模板上用金属有机物气相外延生长的AlGaN基深紫外发光二极管（UV-LED）的性能，并与在外延横向过生长（ELO）AlN/蓝宝石上生长的LED进行了比较。在350 nm溅射和高温退火的AlN/蓝宝石上的器件的结构和电光特性显示出与在低缺陷密度ELO AlN/蓝宝石模板上生长的LED相似的缺陷密度和输出功率水平。在350 nm溅射AlN的高温退火之后，高分辨率X射线衍射摇摆曲线的（0002）和10（1）在bar 2上的反射的半最大值处的全宽度分别减小一个数量级至65弧秒和240弧秒。在用400 nm MOVPE AlN再生长之后，溅射和HTA AlN/蓝宝石模板的曲率为约80 km（-1），远低于ELO AlN/蓝宝石模板的曲率约160 km（-1）。在350 nm溅射和高温退火AlN/蓝宝石模板和ELO AlN/蓝宝石模板上生长的268 nm LED的在片测量输出功率分别为0.70 mW和0.72 mW（对应于0.75%和0.78%的外量子效率）。这些结果表明，溅射和高温退火的AlN/蓝宝石提供了一种可行的方法，用于制造高效的UVC-LED，降低了复杂性，从而降低了成本。出版社：AIP Publishing
The performance characteristics of AlGaN-based deep ultraviolet light emitting diodes (UV-LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature annealed AlN/sapphire templates are investigated and compared with LEDs grown on epitaxially laterally overgrown (ELO) AlN/sapphire. The structural and electro-optical properties of the devices on 350 nm sputtered and high temperature annealed AlN/sapphire show similar defect densities and output power levels as LEDs grown on low defect density ELO AlN/sapphire templates. After high temperature annealing of the 350 nm sputtered AlN, the full widths at half maximum of the (0002) and 10 (1) over bar2 reflections of the high resolution x-ray diffraction rocking curves decrease by one order of magnitude to 65 arc sec and 240 arc sec, respectively. The curvature of the sputtered and HTA AlN/sapphire templates after regrowth with 400 nm MOVPE AlN is with -80 km(-1) much lower than the curvature of the ELO AlN/sapphire template of -160 km(-1). The on-wafer measured output powers of 268 nm LEDs grown on 350 nm sputtered and high temperature annealed AlN/sapphire templates and ELO AlN/sapphire templates were 0.70mW and 0.72mW at 20 mA, respectively (corresponding to an external quantum efficiency of 0.75% and 0.78%). These results show that sputtered and high temperature annealed AlN/sapphire provide a viable approach for the fabrication of efficient UVC-LEDs with reduced complexity and thus reduced costs. Published by AIP Publishing.