Enhanced radiative recombination rate for electron-hole droplets in a silicon photonic crystal nanocavity
Enhanced radiative recombination rate for electron-hole droplets in a silicon photonic crystal nanocavity
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硅光子晶体纳米腔中电子空穴液滴的增强辐射复合率
DOI:
10.1103/physrevb.96.035303
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发表时间:
2017
影响因子:
3.7
通讯作者:
and Yoshihiko Kanemitsu
中科院分区:
文献类型:
--
作者:
Toshiyuki Ihara;Yasushi Takahashi;Susumu Noda;and Yoshihiko Kanemitsu
We investigate photoluminescence (PL) spectra and dynamics of clean silicon photonic crystal nanocavities at 10 K. A sharp emission peak due to the nanocavity mode has the largest intensity when the energy of the nanocavity mode is equal to the emission energy of the electron-hole droplets (EHDs). Time-resolved PL spectroscopy indicates that the PL lifetime of the EHD is reduced to as short as 1.2 ns by the nanocavity mode. A careful analysis of the lifetimes indicates that the radiative recombination rate for EHD is enhanced by a factor of larger than 5 by the Purcell effect.