Modulation of the Electrostatic and Quantum Capacitances of Few Layered Graphenes through Plasma Processing.
Modulation of the Electrostatic and Quantum Capacitances of Few Layered Graphenes through Plasma Processing.
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DOI：
10.1021/acs.nanolett.5b00055
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发表时间：
2015-04
期刊：
影响因子：
10.8
通讯作者：
R. Narayanan;Hidenori Yamada;M. Karakaya;R. Podila;A. Rao;P. Bandaru
中科院分区：
文献类型：
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作者：
R. Narayanan;Hidenori Yamada;M. Karakaya;R. Podila;A. Rao;P. Bandaru
结果表明，通过基于氩离子的等离子体处理，在几层石墨烯中产生带电缺陷，可以大大提高电化学储能的电容。详细考虑的构成空间电荷和量子电容被用来描绘一个新的长度尺度，相关的电活性缺陷的电容，并被发现是小于通过拉曼光谱确定的结构相关长度。该研究提供了一种工业上可行的方法（即，等离子体处理）用于改性和增强石墨烯基电化学电容器的能量密度。
It is shown that charged defect generation, through argon ion-based plasma processing, in few layer graphene, could substantially enhance the electrical capacitance for electrochemical energy storage. Detailed consideration of the constituent space charge and quantum capacitances were used to delineate a new length scale, correlated to electrically active defects contributing to the capacitance, and was found to be smaller than a structural correlation length determined through Raman spectroscopy. The study offers insights into an industrially viable method (i.e., plasma processing) for modifying and enhancing the energy density of graphene-based electrochemical capacitors.