Spin polarization at semiconductor point contacts in absence of magnetic field
Spin polarization at semiconductor point contacts in absence of magnetic field
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DOI：
10.1143/jpsj.74.1934
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发表时间：
2005-07-01
影响因子：
1.7
通讯作者：
Kurotani, Y
中科院分区：
文献类型：
--
作者：
Eto, M;Hayashi, T;Kurotani, Y
半导体点接触可以是一个有用的工具，用于产生自旋-轨道（SO）相互作用的存在下的自旋极化电流。既不需要磁场也不需要磁性材料。通过数值研究，我们发现：（i）电导量子化的单位为2 e（2）/h，除非SO相互作用太强;（ii）电流在横向上是自旋极化的;（iii）在实验上可以达到的SO相互作用强度值下，可以实现大于50%的自旋极化.自旋极化比是由不同自旋的子带之间的过渡在通过点接触的运输过程中的绝热性。
Semiconductor point contacts can be a useful tool for producing spin-polarized currents in the presence of spin-orbit (SO) interaction. Neither magnetic fields nor magnetic materials are required. By numerical studies, we show that (i) the conductance is quantized in units of 2e(2)/h unless the SO interaction is too strong, (ii) the current is spin-polarized in the transverse direction, and (iii) a spin polarization of more than 50% can be realized with experimentally accessible values of the SO interaction strength. The spin-polarization ratio is determined by the adiabaticity of the transition between subbands of different spins during the transport through the point contacts.