Synthesis and Properties of Semiconducting Iron Disilicide β-FeSi2
Synthesis and Properties of Semiconducting Iron Disilicide β-FeSi2
复制标题
半导体二硅化铁β-FeSi2的合成与性能
DOI：
10.1143/jjap.38.5192
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发表时间：
1999
影响因子：
1.5
通讯作者：
T. Tsukamoto
中科院分区：
文献类型：
--
作者：
H. Kakemoto;Y. Makita;S. Sakuragi;T. Tsukamoto
采用水平梯度冷冻法制备了β-二硅化铁β-FeSi2块状晶体。通过结构、电学和光学测量对生长的 β-FeSi2 块状晶体进行了表征。通过X射线衍射测量确定β-FeSi2单相。 β-FeSi2 的电阻率随着温度的降低呈指数增加。根据透射率测量获得的光学吸收光谱，确定能带隙为0.85 eV。通过Kramers-Kronig分析使用光学反射光谱计算折射率、消光系数和介电常数。除β-FeSi2块体材料外，以上述β-FeSi2块体晶体为靶材，通过激光烧蚀方法在Si(100)衬底上制备了β-FeSi2薄膜。在 171 cm-1、190 cm-1、199 cm-1 和 247 cm-1 处观察到来自 β-FeSi2 薄膜的强拉曼信号，表明沉积了定向良好的高质量薄膜。 1.0 eV 处的光吸收系数和能带隙分别确定为 1.99×105 cm-1 和 0.85 eV。
Beta-iron disilicide β-FeSi2 bulk crystals were prepared by a horizontal gradient freeze method. The grown β-FeSi2 bulk crystals were characterized by structural, electrical and optical measurements. The β-FeSi2 single phase was determined by X-ray diffraction measurements. The electrical resistivity of β-FeSi2 increased exponentially with decreasing temperature. From optical absorption spectra that were obtained from transmittance measurements, the energy band gap was determined to be 0.85 eV. The refractive index, extinction coefficient and dielectric constants were calculated using optical reflectance spectra by Kramers-Kronig analysis. In addition to β-FeSi2 bulk materials, β-FeSi2 films were prepared on Si(100) substrates by a laser ablation method using the above β-FeSi2 bulk crystals as target materials. Strong Raman signals from the β-FeSi2 films were observed at 171 cm-1, 190 cm-1, 199 cm-1 and 247 cm-1, indicating deposition of well-oriented high-quality films. The optical absorption coefficient at 1.0 eV and energy band gap were determined to be 1.99× 105 cm-1 and 0.85 eV, respectively.