Formation mechanism and optical properties of nanocrystalline silicon in silicon oxide
Formation mechanism and optical properties of nanocrystalline silicon in silicon oxide
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DOI：
10.1063/1.1935136
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发表时间：
2005-07
影响因子：
3.2
通讯作者：
Jong Hoon Kim;K. Jeon;Sang Yeol Lee
中科院分区：
文献类型：
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作者：
Jong Hoon Kim;K. Jeon;Sang Yeol Lee
采用脉冲激光沉积(PLD)技术在硅衬底上制备了直径为1.5~3 nm的纳米硅，并对其进行了热处理和氧化处理。研究了薄膜的光学和结构性质随沉积温度、退火和氧化过程的变化。随着沉积温度的升高，薄膜的光致发光强度急剧下降，发光峰位出现红移。退火工艺可以减少缺陷中心的数量。氧化对纳米晶的形成和分离有相当大的影响。这些结果表明，用PLD方法形成纳米硅晶体的机理依次可以用生长、钝化缺陷中心和隔离三个步骤来解释。
Silicon nanocrystals with diameters ranging from 1.5 to 3 nm were formed on silicon substrates by using a pulsed laser deposition (PLD) followed by annealing and oxidation. The optical and structural properties of the films have been investigated as a function of deposition temperature, annealing, and oxidation process. When the deposition temperature increased, photoluminescence intensity abruptly decreased and peaks showed redshift. Annealing process can reduce the number of defect centers. Oxidation has considerable effect upon the formation and isolation of the nanocrystals. These results suggest that the formation mechanism of Si nanocrystals by using PLD could be explained by three steps of growth, passivating defect centers, and isolation, sequentially.