A kinetic study of the chemical vapor deposition of silicon carbide from dichlorodimethylsilane precursors
A kinetic study of the chemical vapor deposition of silicon carbide from dichlorodimethylsilane precursors
复制标题
二氯二甲基硅烷前驱体化学气相沉积碳化硅的动力学研究
DOI：
10.1149/1.1838451
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
H. Komiyama
中科院分区：
文献类型：
--
作者：
T. Takeuchi;Y. Egashira;T. Osawa;H. Komiyama
以二氯二甲基硅烷（DDS）为原料，在1173 ~ 1373 K的温度下，采用常压化学气相沉积（APCVD）法制备了碳化硅（SiC）薄膜。建立了DDS化学气相沉积SiC的综合模型，包括气-表面传质、表面粘附和气相化学。该模型成功地再现了我们的实验结果以及先前文献报道的结果。该模型假设气相化学包括两种生成SiC的反应路径：(i) DDS气相分解形成生长物质，最可能的是由DDS中的Si-C键的裂变反应引发，然后附着在表面；（ii）该生长物质与DDS之间的聚合，然后沉积在表面。还确定了相对于气相化学反应传质的相对重要性。
Silicon carbide (SiC) films were prepared from dichlorodimethylsilane (DDS) precursors at temperatures ranging from 1173 to 1373 K by atmospheric pressure chemical vapor deposition (APCVD). A comprehensive model of the chemical vapor deposition of SiC from DDS was developed, which includes gas-to-surface mass transfer, surface sticking, and gas-phase chemistry. This model successfully reproduced our experimental results as well as those previously reported in the literature. This model assumed that the gas-phase chemistry consists of two reaction paths to form SiC: (i) gas-phase decomposition of DDS to form a growth species, most plausibly initiated by the fission reaction of the Si-C bond in DDS, followed by sticking on the surface and (ii) polymerization between this growth species and DDS, followed by deposition on the surface. The relative importance of mass transfer relative to chemical reactions in the gas phase was also determined.