Piezoresistivity of polycrystalline p-type diamond films of various doping levels at different temperatures
Piezoresistivity of polycrystalline p-type diamond films of various doping levels at different temperatures
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DOI：
10.1063/1.365606
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发表时间：
1997-07
影响因子：
3.2
通讯作者：
W. L. Wang;Xin Jiang;K. Taube;C. Klages
中科院分区：
文献类型：
--
作者：
W. L. Wang;Xin Jiang;K. Taube;C. Klages
研究了多晶p型金刚石薄膜的压阻特性。薄膜采用微波等离子体辅助化学气相沉积法生长，并原位掺杂不同浓度的硼。进行四点电测量以评估在四点弯曲梁设置中应变时的膜电阻率变化。将膜直接粘合到不锈钢梁上，并选择性地去除硅衬底。在室温下，对于掺杂有32ppm硼的膜，在100微应变下获得约690的应变计因子（电阻率除以弹性应变的相对变化）。随着温度和掺杂剂浓度的增加，规范因子增加。对实验结果进行了讨论。
The piezoresistivity of polycrystalline p-type diamond films has been studied. The films were grown by microwave plasma assisted chemical vapor deposition and in situ doped with different concentrations of boron. A four-point electrical measurement was performed to evaluate the film resistivity change upon straining in a four-point bending beam setup. Films were glued directly onto a stainless steel beam and the silicon substrates were selectively removed. A gauge factor (relative change of the resistivity divided by the elastic strain) of about 690 under 100 microstrains was obtained at room temperature for a film doped with 32 ppm boron. With increasing temperature and dopant concentration the gauge factor increases. The experimental results obtained are discussed.