Diffusion of Nickel in Silicon
Diffusion of Nickel in Silicon
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DOI：
10.1002/pssb.19670200210
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发表时间：
1967-12
期刊：
影响因子：
--
通讯作者：
H. Bonzel
中科院分区：
文献类型：
--
作者：
H. Bonzel
在450至800 °C的温度范围内，镍（Ni 63）在硅单晶中扩散的研究支持这种杂质的“解离扩散机制”。Ni向Si中的快速填隙扩散之后是金属与空位的复杂反应，导致特定的替位镍浓度分布。讨论了空位的产生和扩散对反应的影响。空位扩散的活化能估计为44千卡/摩尔，硅中的自扩散率可以近似地用下式描述。
The study of diffusion of nickel (Ni63) in silicon single crystals in the temperature range 450 to 800 °C supports the “dissociative diffusion mechanism” for this impurity. Rapid interstitial diffusion of Ni into Si is followed by a complex reaction of interstitials with vacancies resulting in particular concentration profiles of substitutional nickel. The production and diffusion of vacancies which has a great influence on this reaction, is discussed. The activation energy for diffusion of vacancies has been estimated to 44 kcal/mol and the self-diffusivity in silicon can be approximately described by .