Conductive Cuprous Iodide Hole-Selective Contacts with Thermal and Ambient Stability for Silicon Solar Cells
Conductive Cuprous Iodide Hole-Selective Contacts with Thermal and Ambient Stability for Silicon Solar Cells
复制标题
用于硅太阳能电池的具有热稳定性和环境稳定性的导电碘化亚铜空穴选择性接触
DOI：
10.1021/acsami.8b16883
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发表时间：
2018
影响因子：
9.5
通讯作者：
Shen Hui
中科院分区：
文献类型：
--
作者：
Lin Wenjie;Wu Weiliang;Xie Qi;Liu Zongtao;Qiu Kaifu;Cai Lun;Yao Zhirong;Meng Lanxiang;Ai Bin;Liang Zongcun;Shen Hui
无掺杂载流子选择接触在硅太阳能电池中的应用正变得越来越有吸引力，因为它们的制备更简单，而且发生在较低的温度下。然而，这些接触受到热稳定性和环境稳定性差的限制。在这一贡献中，由于CuI/p-Si界面具有较大的导带偏移量和较小的价偏移量，利用具有热稳定性和环境稳定性的高导电功函数，使得p型硅太阳电池的空穴选择接触成为可能。Ag/CuI(20 Nm)/p-Si接触经2 0 0℃处理后的接触电阻率(≈30mΩ·cm2)代表了CuI基低电阻、高热稳定性的空穴选择接触.Ag/CuI/p-Si接触界面的显微图像和元素图谱表明，Ag电极和p型硅之间有一个不均匀的、连续的CuI层。200℃的热处理导致Ag和CuI层的混合。结果表明，200℃热处理提高了部分CuI孔选择接触的p-Si太阳电池的效率(20.7%)和稳定性。此外，采用CuI/Ag接触的器件在温度高达350°C时热稳定。这些结果不仅证明了使用金属碘化物而不是金属氧化物作为高效硅太阳能电池的空穴选择接触，而且对工业可行性和现场部署的寿命也有重要影响。
Dopant-free carrier-selective contacts are becoming increasingly attractive for application in silicon solar cells because of the depositions for their fabrication being simpler and occurring at lower temperatures. However, these contacts are limited by poor thermal and environmental stability. In this contribution, the use of the conductive high work function of cuprous iodide, with its characteristic thermal and ambient stability, has enabled a hole-selective contact for p-type silicon solar cells because of the large conduction band offset and small valence offset at the CuI/p-Si interface. The contact resistivity (≈30 mΩ·cm2) of the Ag/CuI (20 nm)/p-Si contact after annealing to 200 °C represents the CuI-based hole-selective contact with low resistance and high thermal stability. Microscopic images and elemental mapping of the Ag/CuI/p-Si contact interface revealed that a nonuniform, continuous CuI layer separates the Ag electrode and p-type Si. Thermal treatment at 200 °C results in the intermixing of the Ag and CuI layers. As a result, the 200 °C thermal process improves the efficiency (20.7%) and stability of the p-Si solar cells featuring partial CuI hole-selective contact. Furthermore, the devices employing the CuI/Ag contact are thermally stable upon annealing to temperatures up to 350 °C. These results not only demonstrate the use of metal iodide instead of metal oxides as hole-selective contacts for efficient silicon solar cells but also have important implications regarding industrial feasibility and longevity for deployment in the field.