Graphene-based bipolar spin diode and spin transistor: Rectification and amplification of spin-polarized current
Graphene-based bipolar spin diode and spin transistor: Rectification and amplification of spin-polarized current
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DOI：
10.1103/physrevb.83.115427
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发表时间：
2011-03-14
影响因子：
3.7
通讯作者：
Feng, Yuanping
中科院分区：
文献类型：
--
作者：
Zeng, Minggang;Shen, Lei;Feng, Yuanping
利用非平衡绿色函数方法结合密度泛函理论，我们报道了锯齿形石墨烯纳米带（ZGNRs）中的双极自旋二极管行为。在这些双端双极自旋二极管中，通过源极-漏极电压和/或磁配置可以产生和调谐几乎+/-100%的自旋极化电流。这种独特的输运性质归因于ZGNR中费米能级附近自旋子带波函数的内在透射选择规则。此外，基于ZGNR的双端自旋二极管的偏置电压和磁性配置提供了多种多样的控制自旋电流的方法，其可以用于设计三端自旋晶体管。这些基于ZGNRs的组件使得自旋极化电流的操纵成为可能，例如碳基自旋电子学的整流和放大。
Using nonequilibrium Green's function method combined with density functional theory we report bipolar spin diode behavior in zigzag graphene nanoribbons (ZGNRs). Nearly +/- 100% spin-polarized current can be generated and tuned by a source-drain voltage and/or magnetic configurations in these two-terminal bipolar spin diodes. This unique transport property is attributed to the intrinsic transmission selection rule of the wave function of spin subbands near the Fermi level in ZGNRs. Moreover, the bias voltage and magnetic configurations of the two-terminal ZGNR-based spin diodes provide a rich variety of ways to control the spin current, which can be used to design three-terminal spin transistors. These ZGNRs-based components make possible the manipulation of spin-polarized current such as rectification and amplification for carbon-based spintronics.