Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation
Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation
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DOI：
10.1002/9781118920411
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发表时间：
2015-07
期刊：
影响因子：
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通讯作者：
G. Carpintero;L. G. Muñoz;H. Hartnagel;S. Preu;A. Räisänen
中科院分区：
文献类型：
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作者：
G. Carpintero;L. G. Muñoz;H. Hartnagel;S. Preu;A. Räisänen
半导体太赫兹 (THz) 技术的关键进展现在有望带来重要的新应用，使科学家和工程师能够克服进入所谓“太赫兹间隙”的挑战。这本开创性的参考文献解释了使用固态设备生成、检测和处理太赫兹波的基本方法并调查了创新技术，并说明了它们在安全和电信等领域的潜在应用。
Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap". This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields.