Cleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN heterostructure grown on GaAs (100) substrate
Cleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN heterostructure grown on GaAs (100) substrate
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GaAs (100) 衬底上生长的光泵浦立方 GaN/AlGaN 异质结构的劈裂腔受激发射
DOI：
10.1063/1.122326
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发表时间：
1998
影响因子：
4
通讯作者：
Y. Shiraki
中科院分区：
文献类型：
--
作者：
J. Wu;H. Yaguchi;K. Onabe;Y. Shiraki
采用金属有机气相外延技术在半绝缘的GaN(100)衬底上生长了立方GaN/AlGaN双异质结。在15K下，从光泵立方GaN/AlGaN异质结的解理边观察到很强的受激发射，这是通过割裂衬底简单地形成腔体。受激辐射表现为输出强度的超线性增加和高度横向的电极化性质。与自发辐射相比，受激辐射有明显的红移。
Cubic GaN/AlGaN double heterostructure was grown on semi-insulating GaAs (100) substrate by metalorganic vapor phase epitaxy. Strong stimulated emission was observed from the cleaved edge of the optically pumped cubic GaN/AlGaN heterostructure at 15 K. The cavity was formed simply by cleaving the substrate. The stimulated emission was demonstrated by the superlinear increase of the output intensity and the highly transverse electric polarized nature. The stimulated emission showed an obvious redshift compared with the spontaneous one.