Optoelectronic Properties of (CH3NH3)3Sb2I9 Thin Films for Photovoltaic Applications
Optoelectronic Properties of (CH3NH3)3Sb2I9 Thin Films for Photovoltaic Applications
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DOI：
10.1021/acsenergylett.6b00170
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发表时间：
2016-07-01
影响因子：
22
通讯作者：
Kirchartz, Thomas
中科院分区：
文献类型：
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作者：
Hebig, Jan-Christoph;Kuhn, Irina;Kirchartz, Thomas
我们提出了无铅钙钛矿相关的甲基碘化锑铵（CH 3 NH3）（3）Sb 2 I9化合物的基于溶液的制备和表征。通过光热偏转光谱（PDS），我们测定了（CH_3 NH_3）（3）Sb_2 I_9非晶薄膜的峰值吸收系数α约为10（5）cm（-1），光学带隙为2.14 eV。与相关的Bi化合物相比，Sb-钙钛矿在其吸收光谱中没有显示激子峰。在1.58 eV处观察到光致发光发射（PL），并且该非晶化合物的Urbach尾能为E-u = 62 meV，表明大量的能量紊乱。我们制作了一个平面异质结太阳能电池与（CH 3 NH3）（3）Sb 2 I9吸收层，产生的能量转换效率约为0.5%，已经具有良好的填充因子（FF）的55%和890 mV的开路电压，但低的光电流密度。对（CH 3 NH3）Sb 2 I9的基础研究结果表明，该化合物是进一步研究Sb基无铅钙钛矿太阳能电池的可能起点。
We present solution-based fabrication and characterization of the lead-free perovskite-related methylammonium antimony iodide (CH3NH3)(3)Sb2I9 compound. By photothermal deflection spectroscopy (PDS), we determined a peak absorption coefficient a approximate to 10(5) cm(-1) and an optical band gap of 2.14 eV for amorphous films of (CH3NH3)(3)Sb2I9. Compared to the related Bi compound, the Sb-perovskite shows no exciton peak in its absorption spectrum. The photoluminescence emission (PL) is observed at 1.58 eV, and the Urbach tail energy of this amorphous compound is E-u = 62 meV, indicating a substantial amount of energetic disorder. We fabricate a planar heterojunction solar cell with a (CH3NH3)(3)Sb2I9 absorber layer that yields a power conversion efficiency of eta approximate to 0.5%, already featuring a decent fill factor (FF) of 55% and open-circuit voltage of 890 mV but low photocurrent densities. The result of this basic study on (CH3NH3)Sb2I9 shows that this compound is a possible starting point for further research into Sb-based lead-free perovskite solar cells.