Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design
Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design
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未钝化的 GaN/AlGaN/GaN 功率高电子迁移率晶体管，其色散由外延层设计控制
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
U. Mishra
中科院分区：
文献类型：
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作者：
L. Shen;R. Coffie;D. Buttari;S. Heikman;A. Chakraborty;A. Chini;S. Keller;S. Denbaars;U. Mishra
本文讨论了一种新型 GaN/AlGaN/GaN 高电子迁移率晶体管（HEMT）。该器件使用厚的 GaN 盖层（∼250 nm）来减少表面电位波动对器件性能的影响。没有 Si3N4 钝化的器件在 200 ns 脉冲宽度栅极延迟测量中没有显示色散。蓝宝石基板上的未钝化器件在 10 GHz (VDS=+15 V) 下实现了 3.4 W/mm 的饱和输出功率密度和 32% 的峰值功率附加效率 (PAE)。大栅极漏电流和低击穿电压阻止了更高的漏极偏置操作，目前正在研究中。
In this paper, a novel GaN/AlGaN/GaN high electron mobility transistor (HEMT) is discussed. The device uses a thick GaN-cap layer (∼250 nm) to reduce the effect of surface potential fluctuations on device performance. Devices without Si3N4 passivation showed no dispersion with 200-ns-pulse-width gate-lag measurements. Saturated output-power density of 3.4 W/mm and peak power-added efficiency (PAE) of 32% at 10 GHz (VDS=+15 V) were achieved from unpassivated devices on sapphire substrates. Large gate-leakage current and low breakdown voltage prevented higher drain-bias operation and are currently under investigation.