Effect of Nitrogen Concentration on Capacitance, Density of States, Electronic Conductivity, and Morphology of N-Doped Carbon Nanotube Electrodes

Effect of Nitrogen Concentration on Capacitance, Density of States, Electronic Conductivity, and Morphology of N-Doped Carbon Nanotube Electrodes
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DOI:
10.1021/jp907160v
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发表时间:
2009-10
影响因子:
3.7
通讯作者:
Jaclyn D. Wiggins-Camacho;K. Stevenson
Jaclyn D. Wiggins-Camacho;K. Stevenson
中科院分区:
化学3区
文献类型:
--
作者:
Jaclyn D. Wiggins-Camacho;K. Stevenson

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杂原子掺杂(例如,硼和氮)影响SP2碳材料的各种物理化学性质。介绍了氮掺杂对碳纳米管(N-CNTs)的微分电容、费米能级态密度(D(EF))、体电导率和功函数等电化学和电学性质的影响。对独立的N-CNT电极垫进行研究,以了解材料的固有物理化学性质,而不依赖于另一种导电载体的二次影响。检查范围从0到7.4原子% N的N-掺杂水平,并且使用电化学阻抗谱(EIS)来评估微分电容并估计有效态密度D(EF)。X射线光电子能谱(XPS)和拉曼显微镜被用来评估作为氮掺杂的功能的组成和结构特性。XPS N1s谱显示了三种主要类型的镍。
Heteroatom doping (e.g., boron and nitrogen) of graphitic carbon lattices affects various physicochemical properties of sp2 carbon materials. The influence of nitrogen doping in carbon nanotubes (N-CNTs) on their electrochemical and electrical properties such as the differential capacitance, density of states at the Fermi level (D(EF)), bulk conductivity, and work function is presented. Studies were performed on free-standing N-CNTs electrode mats to understand the intrinsic physicochemical properties of the material without relying on the secondary influence of another conductive support. N-Doping levels ranging from 0 to 7.4 atom % N were examined, and electrochemical impedance spectroscopy (EIS) was used to evaluate the differential capacitance and to estimate the effective density of states, D(EF). X-ray photoelectron spectroscopy (XPS) and Raman microscopy were used to assess the compositional and structural properties as a function of nitrogen doping. XPS N1s spectra show three principle types of ni...