Boron ion implantation effects in C60 films
Boron ion implantation effects in C60 films
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C60 薄膜中硼离子注入效应
DOI：
10.1016/s0927-0248(00)00074-x
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发表时间：
2001
影响因子：
6.9
通讯作者：
M. Yamaguchi
中科院分区：
文献类型：
--
作者：
K. L. Narayanan;O. Goetzberger;Aurangzeb Khan;N. Kojima;M. Yamaguchi
在B离子注入C_(60)薄膜制作器件方面进行了尝试。在n型Si(100)衬底上蒸发的C60薄膜中注入了质量分析的正离子，注入能量为80keV，注入剂量为1×10~(12)−~1×10~(15)离子/厘米~2。高剂量注入薄膜的拉曼散射和傅里叶变换红外光谱研究表明，薄膜中形成了非晶态碳层。霍尔效应测量表明，B离子注入C60薄膜后形成了p型电导。为了实现B在C60薄膜中的均匀分布，研究了能量在50-80keV范围内的多次注入B，并制备了效率高达0.023%的p型C60/n型硅异质结太阳电池。讨论了太阳电池结构的光伏特性以及暗的和有光的I-V特性。
An attempt has been made on the device fabrication with boron ion implanted C60thin films. The C60thin films evaporated on n-type Si (100) have been implanted with mass analyzed positive boron ions at a fixed energy of 80keV to different doses in the range 1×1012−1×1015ions/cm2. Raman scattering and FTIR studies of the high-dose implanted films reveal the formation of amorphous carbon layer. Hall effect measurements indicate the formation of p-type conductivity in C60thin films with boron ion implantation. In order to realize uniform boron distribution in the C60films, multiple boron implantation with energies in the range of 50–80keV has been examined and p-type C60/n-type Si heterojunction solar cells with an efficiency as high as 0.023% have been fabricated. The photovoltaic properties of the solar cell structure are discussed along with the dark and illuminated I—V characteristics.