Study on off‐state breakdown in AlGaN/GaN HEMTs

Study on off‐state breakdown in AlGaN/GaN HEMTs
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DOI：
10.1002/pssc.200303405
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发表时间：
2003-10
期刊：
Physica Status Solidi (c)
影响因子：
--
通讯作者：
T. Nakao;Y. Ohno;S. Kishimoto;K. Maezawa;T. Mizutani
T. Nakao;Y. Ohno;S. Kishimoto;K. Maezawa;T. Mizutani
中科院分区：
其他
文献类型：
--
作者：
T. Nakao;Y. Ohno;S. Kishimoto;K. Maezawa;T. Mizutani

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研究了AlGaN/GaN高电子迁移率晶体管（HEMT）的关态击穿机理。关态击穿电压（BVoff）具有0.12 V/K的正温度系数。BVoff由栅漏电流（Ileak）的单调递减函数表示，Ileak由碰撞电离系数解析导出。我们的研究结果表明，AlGaN/GaN HEMT的关态击穿起源于沟道中的碰撞电离，这是由栅极漏电流引起的。通过在栅极金属沉积之前进行等离子体表面处理，BVoff随着Ileak的降低而增加。（© 2003 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have studied the mechanism of off-state breakdown in AlGaN/GaN high electron mobility transistors (HEMTs). The off-state breakdown voltage (BVoff) had a positive temperature coefficient of 0.12 V/K. BVoff was represented by a monotonous decreasing function of gate leakage current (Ileak), which was analytically derived from the impact ionization coefficient. Our results suggest that off-state breakdown in AlGaN/GaN HEMTs originated from impact ionization in the channel, which was caused by the gate leakage current. BVoff increased with decreasing Ileak by a plasma surface treatment before gate metal deposition. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)