Regulated Epitaxy of YBa2Cu3O7-δ by Atomic Control of Step Arrays on Vicinal SrTiO3(100) Substrates
Regulated Epitaxy of YBa2Cu3O7-δ by Atomic Control of Step Arrays on Vicinal SrTiO3(100) Substrates
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DOI：
10.1143/jjap.38.l1499
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发表时间：
1999-12
影响因子：
1.5
通讯作者：
J. Nie;H. Takashima;N. Terada;A. Shoji;M. Koyanagi
中科院分区：
文献类型：
--
作者：
J. Nie;H. Takashima;N. Terada;A. Shoji;M. Koyanagi
利用原子力显微镜（AFM）研究了邻位SrTiO_3衬底和YBa_2Cu_3 O_（7-δ）（YBCO）薄膜的表面形貌。成功地制备了具有5.7°取向差的SrTiO_3邻位台阶阵列。原子力显微镜揭示了一个很大的改善的表面结构的YBCO薄膜生长在这样的阶梯相邻衬底，表现出规则的阶梯流生长模式和几乎无沉淀的实际器件尺寸的表面。通过高生长速率和低生长温度，台阶聚束以及因此总粗糙度已被基本上抑制。
We have investigated the surface morphologies of vicinal SrTiO3 substrates and YBa2Cu3O7-δ (YBCO) thin films by atomic force microscopy (AFM). Extremely regular step arrays had been successfully developed vicinal SrTiO3 with 5.7° misorientation. AFM reveals a great improvement of the surface microstructures of YBCO thin films grown on such terraced vicinal substrates, exhibiting a regular step-flow growth mode and almost precipitate-free surfaces of practical device sizes. By a high growth rate and low growth temperature, the step bunching and therefore the total roughness have been substantially suppressed.