MONTE-CARLO SIMULATION OF TRANSPORT IN TECHNOLOGICALLY SIGNIFICANT SEMICONDUCTORS OF THE DIAMOND AND ZINCBLENDE STRUCTURES .1. HOMOGENEOUS TRANSPORT
MONTE-CARLO SIMULATION OF TRANSPORT IN TECHNOLOGICALLY SIGNIFICANT SEMICONDUCTORS OF THE DIAMOND AND ZINCBLENDE STRUCTURES .1. HOMOGENEOUS TRANSPORT
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DOI：
10.1109/16.75176
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发表时间：
1991-03-01
影响因子：
3.1
通讯作者：
FISCHETTI, MV
中科院分区：
文献类型：
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作者：
FISCHETTI, MV
在两种晶格温度（77 K和300 K）下，用蒙特卡罗模拟了七种金刚石和锌-闪锌矿结构半导体（Ge、Si、GaAs、InP、AlAs、InAs、GaP）及其合金(Al(x)Ga(1-x)As、in (x)Ga(1-x)As、Ga（x) in (1-x)P）中的电子输运和Si中的空穴输运。该模型采用由局部经验赝势计算得到的能带结构和根据费米黄金法则计算的粒子-晶格散射率来考虑能带结构效应。谷间变形电位明显低于之前在蒙特卡罗文献中报道的，需要重现现有的实验数据。这是由于我们采用了更复杂的能带结构，特别是在大多数材料的L和x对称点周围。尽管在蒙特卡罗结果和一些实验之间获得了令人满意的一致，但关于许多材料的能带结构（AlAs, GaP, InP），速度场特性(GaP, InAs, Al(x)Ga(1-x)As, Ga（x)In(1-x)P）和冲击电离系数（InAs）的不一致或缺乏实验信息表明，我们描述许多这些技术上重要的材料中的电荷输运的能力仍然存在很大的不确定性。
Monte Carlo simulations of electron transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AlAs, InAs, GaP) and some of their alloys (Al(x)Ga(1-x)As, In(x)Ga(1-x)As, Ga(x)In(1-x)P), and hole transport in Si have been performed at two lattice temperatures (77 and 300 K). The model employs band structures obtained from local empirical pseudopotential calculations and particle-lattice scattering rates computed from the Fermi Golden Rule accounting for band-structure effects. Intervalley deformation potentials significantly lower than those previously reported in the Monte Carlo literature are needed to reproduce available experimental data. This is attributed to the more complicated band structures we have adopted, particularly around the L- and X-symmetry points in most materials. Despite the satisfactory agreement obtained between Monte Carlo results and some experiments, the inconsistency or lack of experimental information regarding the band structure (AlAs, GaP, InP), velocity-field characteristics (GaP, InAs, Al(x)Ga(1-x)As, Ga(x)In(1-x)P), and impact ionization coefficients (InAs) of many materials indicate that a significant uncertainty still remains in our ability to describe the charge transport in many of these technologically significant materials.