Reflectance Modulation by the Surface Field in GaAs
Reflectance Modulation by the Surface Field in GaAs
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DOI：
10.1103/physrevlett.21.1569
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发表时间：
1968-12
影响因子：
8.6
通讯作者：
R. Nahory;J. L. Shay
中科院分区：
文献类型：
--
作者：
R. Nahory;J. L. Shay
通过研究GaAs中的反射光谱调制的第二，强光束，我们已经观察到的振荡结构的光谱附近的能隙以及附近的3 eV。我们的结论是，这些结构的结果从中性化的内置表面场的自由载流子所产生的强光束。带隙附近的实验线的形状是定性非常相似的Franz-Keldysh效应的理论预测，但可能是由于激子效应转移到较低的能量。
By studying reflectance spectra in GaAs modulated by a second, intense light beam, we have observed oscillatory structures in the spectra near the energy gap as well as near 3 eV. We conclude that these structures result from a neutralization of the builtin surface field by free carriers created by the intense light beam. The experimental line shape near the band gap is qualitatively very similar to the theoretical prediction for the Franz-Keldysh effect but is shifted to lower energies presumably due to exciton effects.