Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers
Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers
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DOI：
10.1016/j.jcrysgro.2012.12.026
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发表时间：
2013-03-15
影响因子：
1.8
通讯作者：
Skierbiszewski, C.
中科院分区：
文献类型：
--
作者：
Turski, H.;Siekacz, M.;Skierbiszewski, C.
本文研究了镓和氮原子在等离子体辅助分子束外延（PAMBE）生长InGaN中的特殊作用。我们研究了在邻近的GaN（0001）衬底上生长InGaN层。考察了铟掺入量与镓氮通量的关系。我们通过PAMBE建立了InGaN生长的微观模型，假设在纤锌矿晶体的两个非等效原子台阶边缘上不同的铟结合原子结合机制。讨论了镓和氮通量在InGaN层生长过程中的作用。(c) 2013 Elsevier B.V.版权所有
In this work we study the peculiar role of gallium and nitrogen atoms in the growth of InGaN by Plasma Assisted Molecular Beam Epitaxy (PAMBE). We investigate growth of InGaN layers on vicinal GaN (0001) substrates. Indium incorporation as a function of gallium and nitrogen fluxes was examined. We propose a microscopic model of InGaN growth by PAMBE postulating different indium adatom incorporation mechanisms on two nonequivalent atomic step edges of wurtzite crystal. The role of gallium and nitrogen fluxes during the growth of InGaN layers is discussed. (c) 2013 Elsevier B.V. All rights reserved.